What it is
In this study, we report silicon-doped α-(Al x Ga 1-x) 2 O 3 films with bandgaps exceeding 7.0 eV grown by suboxide molecular-beam epitaxy, surpassing that of cubic boron nitride, the next-widest-bandgap semiconductor known.
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Filed underGa2O3 and related materials, Semiconductor materials and devices, GaN-based semiconductor devices and materials